2SK3082STL技术资料参数市场行情瑞萨-114ic电子网

首页 >2SK3082STL>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3082STL	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas
2SK3082STL-E	文件：94.24 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：94.24 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3082	文件：94.24 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：94.24 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3082	文件：57.08 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：57.08 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK3082L	文件：57.08 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：57.08 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

更多2SK3082STL供应商更新时间2026-1-28 14:02:00