Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：77.76 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

•  Low on-resistance\n   RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A)\n\n•  Low drive current\n\n•  High speed switching\n\n•  2.5V gate drive devices.

Renesas

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：45.94 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：77.76 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：77.76 Kbytes 页数：7 Pages

RENESAS

瑞萨