SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1= 27 mΩ(MAX.) (VGS= 10 V, ID= 10 A) RDS(on)2= 40 mΩ(MAX.) (VGS= 4.5 V, ID= 10 A) RDS(on)3= 50 mΩ(MAX.) (VGS= 4 V, ID= 10 A) • Low Ciss: C

文件：59.46 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID =

文件：231.76 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID =

文件：231.76 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1= 27 mΩ(MAX.) (VGS= 10 V, ID= 10 A) RDS(on)2= 40 mΩ(MAX.) (VGS= 4.5 V, ID= 10 A) RDS(on)3= 50 mΩ(MAX.) (VGS= 4 V, ID= 10 A) • Low Ciss: C

文件：59.46 Kbytes 页数：8 Pages

NEC

瑞萨