2SK2927-E规格书批发采购瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK2927-E	文件：93.77 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：93.77 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SK2927	文件：93.77 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：93.77 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SK2927	文件：52.44 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：52.44 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2927	文件：1.60033 Mbytes Page：9 Pages	N-Channel 60 V (D-S) MOSFET 文件：1.60033 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI

更多2SK2927-E供应商更新时间2026-4-20 8:31:00