Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：121.4 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance\n   RDS =0.010 Ω typ.\n• High speed switching\n• 4 V gate drive device can be driven from 5 V source ;

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isc N-Channel MOSFET Transistor

文件：324.05 Kbytes 页数：2 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：121.4 Kbytes 页数：8 Pages

RENESAS

瑞萨