2SK2912STL-E说明书PDF资料库存现货瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK2912STL-E	文件：95.62 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：95.62 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK2912	文件：53.43 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：53.43 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2912	文件：95.62 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：95.62 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK2912L	文件：53.43 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：53.43 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

更多2SK2912STL-E供应商更新时间2025-10-11 14:02:00