Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：95.34 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：95.34 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：95.34 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：95.34 Kbytes 页数：9 Pages

RENESAS

瑞萨

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