N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplif

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FUJI

富士通

N-channel MOS-FET (900V 5.5W 3.5A 100W)

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS = ± 30V Guarantee\n- Repetitive Avalanche Rated Applications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier ;

FUJI

富士通

Power MOSFET

FUJI

富士通

TO-3P

TOSHIBA

东芝

上传：深圳市紫蓝诚电子科技有限公司

TO-252

RENESAS

瑞萨

上传：深圳市凯斯宇科技有限公司