SILICON MONOLITHIC N CHANNEL JUNCTION TYPE

LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High I Yf s 1 : iYf s l=20mS(Typ.) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max.)(VDS=10V, l

文件：133.54 Kbytes 页数：4 Pages

TOSHIBA

东芝

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：34.99 Kbytes 页数：1 Pages

SANKEN

三垦

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=7A@ TC=25℃ · Drain Source Voltage -VDSS=450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.17 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：34.91 Kbytes 页数：1 Pages

SANKEN

三垦

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：34.83 Kbytes 页数：1 Pages

SANKEN

三垦

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：314.37 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.57Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.29 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：35.36 Kbytes 页数：1 Pages

SANKEN

三垦

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：35.21 Kbytes 页数：1 Pages

SANKEN

三垦