HSTM PACKAGE SERIES

Application VHF Amp, FM RF MIX VHF RF Amp, VHF TV Application High lyfs| Low Noise High lyfst Low Noise High lyfs! Low Noise High lyfs! Low Noise 1 Chip High Yfs! Low Noise 1 Chip High Yfs! Low Noise Application Condenser Microphone Condenser Microphone Condenser Microphone

文件：69.01 Kbytes 页数：1 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.38 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.12 Kbytes 页数：2 Pages

ISC

无锡固电

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC–DC Converter and Motor Drive Applications ● Low drain–source ON resistance : RDS (ON) = 1.35 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS

文件：289.76 Kbytes 页数：5 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIHG VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications 1. Low drain−source ON resistance : RDS (ON) = 1.35 Ω(typ.) 2. High forward transfer admittance : |Yfs | = 4.0 S (typ.) 3. Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) 4. Enhancement mode : Vth= 2.0 to 4.0 V (VD

文件：288.8 Kbytes 页数：5 Pages

TOSHIBA

东芝

DC?묭C Converter, Relay Drive and Motor Drive Applications

DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID =

文件：557.08 Kbytes 页数：6 Pages

TOSHIBA

东芝

HVX-2 Series Power MOSFET(900V 1A)

N-Channel Enhancement type FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 240V input ● High voltage p

文件：436.73 Kbytes 页数：12 Pages

SHINDENGEN

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 14Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.98 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.76 Kbytes 页数：2 Pages

ISC

无锡固电

HVX-2 Series Power MOSFET(900V 3A)

FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 240V input ● High voltage power supply

文件：441.16 Kbytes 页数：12 Pages

SHINDENGEN