Silicon N Channel MOS FET

Features • Low on-resistance • RDS(on)= 4.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching

文件：89.83 Kbytes 页数：8 Pages

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瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • RDS(on)= 4.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching

文件：51.58 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • RDS(on)= 4.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching

文件：89.83 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：303.21 Kbytes 页数：2 Pages

ISC

无锡固电