LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS.

FEATURES: • Recommended for first stages of EQ Amplifiers. • High lyfsl lyfsl-22mS (Typ.) (VDS-10V, VGS=0, IDSS=3mA) • Excellent Pair Characteristics : | VGS1-VGS21- 20mV (Max.) (VDS-10V, ID-1mA) • High Breakdown Voltage: VCDS-40V (Min.) •

文件：126.4 Kbytes 页数：4 Pages

TOSHIBA

东芝

HSTM PACKAGE SERIES

Application VHF Amp, FM RF MIX VHF RF Amp, VHF TV Application High lyfs| Low Noise High lyfst Low Noise High lyfs! Low Noise High lyfs! Low Noise 1 Chip High Yfs! Low Noise 1 Chip High Yfs! Low Noise Application Condenser Microphone Condenser Microphone Condenser Microphone

文件：69.01 Kbytes 页数：1 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 17 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode : Vth = 0.8 to 2.

文件：282.63 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 0.13 Ω(typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 200 V) Enhancement mode : Vth= 1.5 to 3.5 V (VDS= 10 V

文件：286.92 Kbytes 页数：5 Pages

TOSHIBA

东芝

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Built-in FRD. • 10V drive.

文件：50.8 Kbytes 页数：3 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.77 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.63 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.64 Kbytes 页数：2 Pages

ISC

无锡固电