N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS= 180 V • High forward transfer admittance: |Yfs| = 0.7 S (typ.) • Complementary to 2SJ338

文件：89.67 Kbytes 页数：1 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 45A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.73 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.03Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：313.49 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof - Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters

文件：210.36 Kbytes 页数：2 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.03Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.86 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof - Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters

文件：176.21 Kbytes 页数：2 Pages

FUJI

富士通

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

文件：82.17 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

文件：85.63 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

文件：78.16 Kbytes 页数：3 Pages

SANYO

三洋

Silicon N Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

文件：65.36 Kbytes 页数：6 Pages

RENESAS

瑞萨