Silicon N-Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

文件：33.8 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

文件：65.36 Kbytes 页数：6 Pages

RENESAS

瑞萨

Power MOSFETs-MOSFETs for amplifier

Renesas

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Fast Switching Speed

DESCRIPTION • Drain Current ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Fast Switching Speed APPLICATIONS • Switching regulators • General purpose power amplifier

文件：70.5 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON N CHANNEL MOS TYPE

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

文件：486.16 Kbytes 页数：5 Pages

TOSHIBA

东芝

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

文件：84.37 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

文件：82.3 Kbytes 页数：3 Pages

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

文件：81.86 Kbytes 页数：3 Pages

SANYO

三洋

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：60.45 Kbytes 页数：6 Pages

NEC

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丝印：NA4；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving

文件：262.71 Kbytes 页数：8 Pages

RENESAS

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