N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for drivin

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MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A ● High switching speed

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KEXIN

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Power MOSFETs-Power MOSFETs for Automotive

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N-Channel MOSFET

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N-Channel MOSFET

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KEXIN

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