Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

文件：42.64 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter

文件：110.53 Kbytes 页数：9 Pages

RENESAS

瑞萨

2SK2085 / Silicon N-Channel MOS FET

•  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  4 V gate drive device can be driven from 5 V source\n•  Suitable for Switching regulator, DC - DC converter

Renesas

瑞萨

SOT-23

TOSHIBA/东芝

上传：深圳市信科顺电子有限公司

SOT-23

TOSHIBA/东芝

上传：深圳广友电子有限公司