isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5.0A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.45 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for switching regulator, DC - DC converter, motor control Application High speed power switching

文件：82.82 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control Application High speed power switching

文件：48.44 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for switching regulator, DC - DC converter, motor control Application High speed power switching

文件：82.82 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, motor control Application High speed power switching

文件：82.12 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control Application High speed power switching

文件：33.69 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, motor control Application High speed power switching

文件：82.12 Kbytes 页数：7 Pages

RENESAS

瑞萨

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5 to 1.5 V • Excellent switching times: ton = 0.06 μs (typ.) toff = 0.12 μs (typ.) • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) • Small package • Enhanceme

文件：173.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：317.9 Kbytes 页数：2 Pages

ISC

无锡固电

Fast Switching Speed

文件：54.16 Kbytes 页数：2 Pages

ISC

无锡固电