Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter, and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) ● High forward transfer admittance : |Yfs| = 2.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID =

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

VR Series Power MOSFET(200V 5A)

FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters ● Power supplies of DC 12-24V input ● Product related to ● Integrated Service Digital Network

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SHINDENGEN

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching

文件：82.49 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

文件：48.86 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching

文件：82.49 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching

文件：82.77 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

文件：49.67 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司