Silicon N Channel MOS FET

Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for low signal load switch Application High speed power switching

文件：95.84 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for low signal load switch Application High speed power switching

文件：95.84 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for low signal load switch Application Low frequency power switching

文件：34.91 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for low signal load switch Application High speed power switching

文件：95.84 Kbytes 页数：6 Pages

RENESAS

瑞萨