Silicon N-Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

文件：49.67 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching

文件：82.77 Kbytes 页数：7 Pages

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瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.85 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：361.38 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

• Low on–resistance\n• High speed switching\n• No secondary breakdown\n• Suitable for Switching regulatorApplication\n  High speed power switching;

HITACHI

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Transistors>Switching/MOSFETs

Renesas

瑞萨

Silicon N Channel MOS FET

Features • Low on–resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching

文件：82.77 Kbytes 页数：7 Pages

RENESAS

瑞萨