N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5 V Gate Drive • Low Threshold Voltage: Vth = 0.5~1.5 V • High Speed • Enhancement-Mode • Small Package

文件：193.58 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon N-Channel MOS FET

Application High speed power switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

文件：33.66 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Application High speed power switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

文件：33.66 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：82.57 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：82.57 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High breakdown voltage (VDSS = 1500V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator Application High speed power switching

文件：48.65 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Application High speed power switching

文件：105.71 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

·FEATURES ·Low drain-source on-resistance: RDS(ON) 7.0Ω (max) ·Enhancement mode: VGS(th) = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators

文件：330.62 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Application High speed power switching

文件：105.71 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

文件：54.26 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

日立日立公司