| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) HIGHSPEEDSWITCHINGAPPLICATIONS ANALOGSWITCHAPPLICATIONS •2.5VGateDrive •LowThresholdVoltage:Vth=0.5~1.5V •HighSpeed •Enhancement-Mode •SmallPackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Silicon N-Channel MOS FET Application Highspeedpowerswitching •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N-Channel MOS FET Application Highspeedpowerswitching •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET Features •Highbreakdownvoltage(VDSS=1500V) •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Features •Highbreakdownvoltage(VDSS=1500V) •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
isc N-Channel MOSFET Transistor ·FEATURES ·Lowdrain-sourceon-resistance: RDS(ON)7.0Ω(max) ·Enhancementmode: VGS(th)=2.0to4.0V(VDS=10V,ID=0.25mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·SwitchingVoltageRegulators | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Silicon N Channel MOS FET Features •Highbreakdownvoltage(VDSS=1500V) •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N-Channel MOS FET •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
2SK183
- 制造商：
Toshiba
- 功能描述：
Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
23+ |
SSM |
45000 |
热卖优势现货 |
询价 | ||
TOSHIBA |
16+ |
SSM |
12500 |
进口原装现货/价格优势! |
询价 | ||
TOSHIBA |
16+ |
SSM |
44590 |
原装现货假一罚十 |
询价 | ||
TOSHIBA/东芝 |
2019+ |
SOT-523 |
36000 |
原盒原包装 可BOM配套 |
询价 | ||
TOSHIBA/东芝 |
20+ |
SOT-423 |
5500 |
代理库存,房间现货,有挂就是现货 |
询价 | ||
TOSHIBA/东芝 |
2019+PB |
SSM |
12500 |
原装正品 可含税交易 |
询价 | ||
TOSHIBA/东芝 |
SSM |
7906200 |
询价 | ||||
TOSHIBA |
2024+ |
SOT-523 |
32560 |
原装优势绝对有货 |
询价 | ||
TOSH |
03+ |
SOT25/ |
4370 |
全新原装进口自己库存优势 |
询价 | ||
TOSHIBA |
16+ |
SOT323 |
3786 |
一片起订!原装低价支持实单! |
询价 |
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