Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：202.93 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：202.93 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：34.34 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.77 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：202.93 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.63 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：34.9 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.79 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.79 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.79 Kbytes 页数：7 Pages

RENESAS

瑞萨