MOS Field Effect Transistor

Features ● Can be driven by Ics having a 5V single power supply. ● Not necessry to consider driving current because of its thgh input impedance. ● Possible to reduce the number of parts by omitting the bias resistor

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MOS Field Effect Transistor

Features ● Can be driven by Ics having a3V single power supply. ● Has low on-state resistance RDS(on)=2.0 Ω MAX.@VGS=2.5V,ID=0.3A RDS(on)=1.5 Ω MAX.@VGS=4.0V,ID=0.3A

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N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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丝印：ND；Package：SC-62；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1583 is an N-channel vertical type MOS FET can be driven by 2.5 V power supply. As the 2SK1583 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone s

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丝印：NH；Package：SC-62；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1584 is a switching device which can be driven directly by a 5 V power source. The 2SK1584 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as actuator driver. FEATURES • Ca

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MOS Field Effect Transistor

Features ● Directly driven by Ics having a 5V P ● Has low on-state resistance RDS(on)=2.0Ω MAX.@VGS=4.0V,ID=0.3A RDS(on)=1.5Ω MAX.@VGS=10V,ID=0.3A

文件：45.25 Kbytes 页数：1 Pages

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N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：302.45 Kbytes 页数：6 Pages

NEC

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MOS Field Effect Transistor

Features ● Directly driven by ICs having a 3 V power supply. ● Has low on-state resistance. RDS(on)1 = 1.2 Ω MAX. (VGS = 2.5 V, ID = 0.5 A) RDS(on)2 = 1.0 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)

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丝印：NE；Package：SC-62；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK1585 is an N-channel vertical type MOSFET which can be driven by the 2.5 V power supply. As the 2SK1585 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and hea

文件：662.02 Kbytes 页数：8 Pages

RENESAS

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N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：318.51 Kbytes 页数：6 Pages

NEC

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