Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Suitable for low voltage operation Application High speed power switching

文件：70.57 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Suitable for low voltage operation Application High speed power switching

文件：39.46 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Suitable for low voltage operation Application High speed power switching

文件：70.57 Kbytes 页数：6 Pages

RENESAS

瑞萨

Drain Current ?밒D=12A@ TC=25C

文件：67.12 Kbytes 页数：2 Pages

ISC

无锡固电

Drain Current ?밒D=12A@ TC=25C

文件：67.11 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：295.72 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：303.15 Kbytes 页数：2 Pages

ISC

无锡固电

Drain Current ?밒D=8A@ TC=25C

文件：64.84 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

· High gain, high efficiency\n   PG = 13 dB, hD = 65% typ (f = 190 MHz)\n· Compact package\n   Suitable for push - pull circuit\n  \nApplication\n  VHF amplifier ;

HITACHI

日立

N-Channel Junction FET Capacitor Microphone Applications

ONSEMI

安森美半导体