N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

Features ● High current ● Low on-resistance ● Low driving power ● High forward transconductance Applications ● Motor controllers ● General purpose power amplifier ● DC-DC converters

文件：69.53 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 120V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.030Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：313.29 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

Drain Current ?밒D=9A@ TC=25C

DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS=600 (Min) APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

文件：61.62 Kbytes 页数：2 Pages

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无锡固电

N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：174.15 Kbytes 页数：2 Pages

FUJI

富士通

N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：174.15 Kbytes 页数：2 Pages

FUJI

富士通

N-Channel Silicon Power Mos-fet(F-II Series)

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche-proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：174.15 Kbytes 页数：2 Pages

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N-channel MOS-FET

60V 0,035W 35A 60W Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance

文件：97.34 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.76 Kbytes 页数：2 Pages

ISC

无锡固电