N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：635.43 Kbytes 页数：5 Pages

BYCHIP

百域芯

2SK1113

2SK1113

文件：62.9 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Field Effect Transistor (MOS II.I)

high-speed, high-current switching ○ For switching regulators . Low on-resistance. : RDS (ON)=0.95Ω (typical) High forward transmission admittance. | Y's|=4.0S (Standard) Ipss=300A (max) (VDs=600V) Low leakage current. Easy to handle, enhancement type. : Vth=1.5~3.5V(Vps=10V, Ip=1mA)

文件：65.09 Kbytes 页数：2 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) ● High forward transfer admittance : |Yfs| = 2.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

文件：255.13 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：305.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：304.85 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：305.09 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：305.21 Kbytes 页数：2 Pages

ISC

无锡固电

2SK1117

文件：55.84 Kbytes 页数：2 Pages

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