Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

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HITACHIHitachi Semiconductor

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Silicon N-Channel MOS FET

• Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device\n   – Can be driven from 5 V source\n• Suitable for motor drive, DC-DC converter, power switch and solenoid driveApplication\n  High speed power switching ;

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