isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.035Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：314.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

* Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance

文件：200.22 Kbytes 页数：2 Pages

FUJI

富士通

Isc N-Channel MOSFETransistor

文件：273.03 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL MOS-FET

文件：212.12 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-channel MOS-FET - 60V 0,035W 35A 80W

* - High Current\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Forward Transconductance;

FUJI

富士通

Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-3P

NJS