N-channel MOS-FET

60V 0,22Ω 8A 20W >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：186.1 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.0A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.45 Kbytes 页数：2 Pages

ISC

无锡固电

Isc N-Channel MOSFETransistor

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ISC

无锡固电

N-channel MOS-FET

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N-channel MOS-FET

60V 0,22Ω 8A 20W >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：186.1 Kbytes 页数：2 Pages

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N-Channel 60 V(D-S) MOSFET

文件：1.0876 Mbytes 页数：8 Pages

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N-channel MOS-FET

60V 0,22Ω 8A 20W - High Current\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Forward TransconductanceApplications\n- Motor Control\n- General Purpose Power Amplifier\n- DC-DC converters;

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