isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.46 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOSFET

Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter

文件：44.89 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：48.81 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：89.64 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：309.36 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：89.64 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-Channel 650 V (D-S) MOSFET

文件：1.086 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFETs

Renesas

瑞萨