Silicon N-Channel Junction FET

Application Low frequency / High frequency amplifier

文件：24.05 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

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Silicon N-Channel Junction FET

Application • Low frequency / High frequency amplifier

文件：58.28 Kbytes 页数：5 Pages

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瑞萨

Silicon N-Channel Junction FET

Application • Low frequency / High frequency amplifier

文件：58.28 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon N-Channel Junction FET

Application • Low frequency / High frequency amplifier

文件：58.28 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon N-Channel Junction FET

Application • Low frequency / High frequency amplifier

文件：58.28 Kbytes 页数：5 Pages

RENESAS

瑞萨

丝印：Z3；Field Effect Transistor Silicon N Channel MOS Type

Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance - RDS(ON) = 0.42 (Typ.) • High Forward Transfer Admittance - Yts | = 0.75S (Typ.) • Low Leakage Current - lGSS=±3µA (Max.) @ VGs = ±16V - lDSS = 100μA (Max.) @ Vos = 60V • Enhancement-Mode - Vth = -0.8 - -2.0V @

文件：343.5 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：Z4；Package：2-5K1B；HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS.

Features -4-Volt Cate Drive -Low Drain-Source ON Resistance : RDS (ON) = 0.952 (Typ.) -High Forward Transfer Admittance : Yfs=0.65S (Typ.) -Low Leakage Current : IGSS=±3μA (Max.) @VGS=±16V : IDSS=100μA (Max.) @VDS=100V -Enhancement-Mode : Vth=0.8-2.0V @VDS=10V

文件：283.42 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon N-Channel Junction FET

文件：93.38 Kbytes 页数：6 Pages

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Silicon N-Channel Junction FET

文件：147.93 Kbytes 页数：6 Pages

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Silicon N-Channel Junction FET

文件：93.38 Kbytes 页数：6 Pages

RENESAS

瑞萨