丝印：XS；Package：SC-96；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557A is a switching device which can be driven directly by a 4 V power source. The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

文件：283.3 Kbytes 页数：8 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

文件：283.91 Kbytes 页数：8 Pages

RENESAS

瑞萨

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SJ557A is a switching device which can be driven directly by a 4 V power source. The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swi • 4 V drive available\n• Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −1.0 A) RDS(on)2 = 134 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)3 = 166 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A)\n• Built-in gate protection diode;

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch

文件：228.21 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven

文件：62.77 Kbytes 页数：8 Pages

NEC

瑞萨