2SJ557中文资料瑞萨数据手册PDF规格书

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SJ557 is a switching device which can be driven directly

by a 4 V power source.

The 2SJ557 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

• Can be driven by a 4 V power source

• Low on-state resistance

RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)

RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)