首页 >2SJ527(S)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPChannelMOSFETHighSpeedPowerSwitching SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HightSpeedPowerSwitching HightSpeedPowerSwitching Features Lowon-resistance RDS(on)=0.3typ. Lowdrivecurrent Highspeedswitching 4Vgatedrivedevices. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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