Ultrahigh-Speed Switching Applications

Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. • Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.

文件：43.08 Kbytes 页数：4 Pages

SANYO

三洋

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 20 S (typ.) ● Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode : Vth = −0.8 to −2.0 V (

文件：286.35 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance : |Yfs| = 23 S (typ.) • Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) • Enhancement mode : Vth = −0.8 to −2.0 V (

文件：284.73 Kbytes 页数：5 Pages

TOSHIBA

东芝

P- Channel Silicon MOS FET Very High-Speed Switching Applications

Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting.

文件：12.44 Kbytes 页数：1 Pages

SANYO

三洋

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = −100 μA (max) (VDS = −200 V) ● Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10

文件：271.39 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：28.87 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：28.87 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司