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2SJ387(L)/(S)

Silicon P-Channel MOS FET

HITACHI

日立

2SJ387L

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件:88.41 Kbytes 页数:8 Pages

RENESAS

瑞萨

2SJ387L

Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件:47.8 Kbytes 页数:10 Pages

HitachiHitachi Semiconductor

日立日立公司

2SJ387L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

文件:88.41 Kbytes 页数:8 Pages

RENESAS

瑞萨

供应商型号品牌批号封装库存备注价格
23+
TO
20000
正品原装货价格低
询价
24+
2000
询价
VBSEMI/台湾微碧
23+
TO251
50000
全新原装正品现货,支持订货
询价
RENESAS
23+
TO-252
50000
全新原装正品现货,支持订货
询价
R
TO-251
22+
6000
十年配单,只做原装
询价
RENESAS
21+
TO-252
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
RENESAS
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
询价
RENESAS
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
询价
R
25+
TO-251
63660
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VBSEMI/微碧半导体
24+
TO251
60000
询价
更多2SJ387(L)/(S)供应商 更新时间2025-11-24 10:30:00