SI NPN TRIPLE DIFFUSED JUNCTION MESA

2SD953 Si NPN Triple Diffused Junction Mesa 2SD959, 2SD960 Si Epitaxial Planar

文件：312.44 Kbytes 页数：6 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A • Complement to Type 2SB869 APPLICATIONS • Designed for power switching applications.

文件：256.959 Kbytes 页数：2 Pages

ISC

无锡固电

isc NPN Silicon Transistor

FEATURES ·Low collector to emitter saturation voltage Vce(sat) ·Satisfactory operation performances at high efficiency with the low-voltage power supply

文件：291.8 Kbytes 页数：3 Pages

ISC

无锡固电

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use as AF output amplifier and flash unit.

文件：213.26 Kbytes 页数：1 Pages

DCCOM

道全

S O T-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation and Current ● Mini Power Type Package

文件：1.6111 Mbytes 页数：4 Pages

JIANGSU

长电科技

Silicon NPN epitaxial planar type

■ Features ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation and Current ● Mini Power Type Package

文件：51.85 Kbytes 页数：1 Pages

KEXIN

科信电子

TRANSISTOR(NPN)

FEATURES Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package

文件：340.86 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

文件：157.26 Kbytes 页数：2 Pages

SUNTAC

TRANSISTOR (NPN)

Features Power dissipation PCM : 0.75 W (Tamb = 25°C) Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V

文件：181.37 Kbytes 页数：1 Pages

WINGS

永盛电子

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features • Low c

文件：87.41 Kbytes 页数：3 Pages

DGNJDZ

南晶电子