Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2250 ■ Features • Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

文件：71.09 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 ■ Features ● Optimum for 80W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：57.24 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) B • Complement to Type 2SB1490 APPLICATIONS • Designed for power amplification.

文件：251.3 Kbytes 页数：2 Pages

ISC

无锡固电

Power Device - Power Transistors - For Audio

Panasonic

松下