80V,0.7A,General Purpose NPN Bipolar Transistor

Galaxy

银河微电

0.7A , 80V NPN Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage and Current • Excellent DC Current Gain Linearity • Complementary to 2SB1189

文件：77.54 Kbytes 页数：1 Pages

SECOS

喜可士

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：38.76 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：42.27 Kbytes 页数：1 Pages

ROHM

罗姆