isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Reliability APPLICATIONS • Designed for line-operated horizontal deflection output applications.

文件：244.16 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

文件：90.5 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

文件：135.05 Kbytes 页数：3 Pages

SAVANTIC

RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS

DESCRIPTION The SD1391 is a gold metallized NPN planar transistor using diffused emitter ballast resistors for reliability and ruggedness. The SD1391 is specifically designed as a low power, high gain driver and can be operated in Class A, B or C. .470 MHZ .24 VOLTS .EFFICIENCY 50

文件：56.2 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

文件：69.56 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Driver Applications

Driver Applications Features • High DC current gain. • Large current capacity • Wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • High inductive load handling ca

文件：80.24 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 2.5A • Low Saturation Voltage • Fast Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general

文件：273.08 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Built-in damper diode • High voltage ,high reliability • High speed switching APPLICATIONS • For horizontal output applications

文件：145.37 Kbytes 页数：3 Pages

SAVANTIC

NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR HORIZONTAL OUTPUT (BUILT-IN DAMPER DIODE)

FEATURES • High Breakdown Voltage and High Reliability. • High Switching Speed. • Capable of being mounted easily due to one-point fixing type plastic mold package.

文件：42.77 Kbytes 页数：1 Pages

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Built-in damper diode • High voltage ,high reliability • High speed switching APPLICATIONS • For horizontal output applications

文件：92.02 Kbytes 页数：3 Pages

ISC

无锡固电