Silicon NPN epitaxial planar type(For power switching)

For power switching Complementary to 2SB934 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiating fin to the printe

文件：62.12 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：296.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：277.79 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial Planar Type

Features • Low collector-emitter saturation voltage VCE(sat). • Satisfactory linearity of forward current transfer ratio hFE. • Large collector current IC.

文件：41.98 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：296.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：277.79 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planar type(For power switching)

For power switching Complementary to 2SB934 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiating fin to the printe

文件：62.12 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN Epitaxial Planar Type

Features • Low collector-emitter saturation voltage VCE(sat). • Satisfactory linearity of forward current transfer ratio hFE. • Large collector current IC.

文件：41.98 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● N type package enabling direct soldering of the radiating f

文件：48.33 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.58 Kbytes 页数：2 Pages

ISC

无锡固电