Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：277.88 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type(For power switching)

Silicon PNP epitaxial planar type For Power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circ

文件：58.06 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

文件：260.69 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：296.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：277.9 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planar type(For power switching)

Silicon NPN epitaxial planar type For power switching Complementary to 2SB933 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiat

文件：58.26 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type(For power switching)

Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiati

文件：57.88 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory linearity of forward current transfer ratio hFE. ● Large collector current IC.

文件：40.56 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：296.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：277.9 Kbytes 页数：2 Pages

ISC

无锡固电