Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.91 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Triple Diffusion Junction Type

■ Features • Wide area of safe operation.

文件：41.89 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.91 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.85 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion junction type(For power amplification)

For power amplification ■ Features ● Wide area of safe operation (ASO) ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

文件：50.84 Kbytes 页数：2 Pages

Panasonic

松下

Silicon NPN triple diffusion planar type(For power amplification)

For power amplification Complementary to 2SB0929 (2SB929)and 2SB0929A(2SB929A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin

文件：49.3 Kbytes 页数：2 Pages

Panasonic

松下

Silicon PNP epitaxial planar type(For power amplification)

For power amplification Complementary to 2SD1252 and 2SD1252A ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin to the printed c

文件：50.21 Kbytes 页数：2 Pages

Panasonic

松下

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：296.2 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：277.16 Kbytes 页数：2 Pages

ISC

无锡固电