Transistor-Bipolar Power Transistors

Renesas

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

文件：145.98 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

文件：32.92 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858

文件：145.98 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB858 APPLICATIONS ·Designed for low frequency power amplifier applications.

文件：111.26 Kbytes 页数：2 Pages

ISC

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