NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ​​​​​​​● World Standard Miniature Package : SOT-89 ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007)

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NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl

文件：1.7232 Mbytes 页数：6 Pages

RENESAS

瑞萨

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor Features ● High collector to emitter voltage: VCEO > 120V.

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KEXIN

科信电子

High collector to emitter vlotage

Features High collector to emitter voltage: VCEO > 120V.

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SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS

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AITSEMI

创瑞科技

NPN Silicon Epitaxial Planar Transistor

MSV

萌盛微

晶体三极管

TWTLsemi

腾领

NPN小信号三极管

CBI

创基电子

NPN Transistors

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KEXIN

科信电子

NPN Transistors

文件：1.24294 Mbytes 页数：3 Pages

KEXIN

科信电子