2SC5974

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA2SC5974isaminipackageresinsealedsiliconNPNepitaxialtransistorformutingandswitching.application FEATURE ◾Smallpackegeformounting ◾HighEmittertoBasevoltageVEBO=50V ◾HighReversehFE ◾LowONRESISTANCE.RON=1Ω APPLICATION Formuting,switching

2SC5974A

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA2SC5974AisaminipackageresinsealedsiliconNPNepitaxialtransistorformutingandswitching.application FEATURE ◾Smallpackegeformounting ◾HighEmittertoBasevoltageVEBO=40V ◾HighReversehFE ◾LowONRESISTANCE.RON=1Ω APPLICATION Formuting,switchin

2SC5974B

SMALL-SIGNAL TRANSISTOR

DESCRIPTION ISAHAYA2SC5974BisaminipackageresinsealedsiliconNPNepitaxialtransistorformutingandswitching.application FEATURE ◾Smallpackegeformounting ◾HighEmittertoBasevoltageVEBO=40V ◾HighReversehFE ◾LowONRESISTANCE.RON=0.75Ω APPLICATION Formuting,swit

2SC5976

Transistor Silicon NPN Epitaxial Type

High-SpeedSwitchingApplications DC-DCConverterApplications StrobeFlashApplications •HighDCcurrentgain:hFE=250to400(IC=0.3A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.14V(max) •High-speedswitching:tf=25ns(typ.)

2SC5976

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC5979

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFEwidth. •Highallowablepowerdissipation. Applications •DC/DCconverter,relaydrivers,lampd

2SC5975

SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR