NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

文件：329.12 Kbytes 页数：6 Pages

CEL

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

文件：201.6 Kbytes 页数：9 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

文件：329.12 Kbytes 页数：6 Pages

CEL

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

文件：73.96 Kbytes 页数：7 Pages

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

文件：73.96 Kbytes 页数：7 Pages

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

文件：73.96 Kbytes 页数：7 Pages

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

文件：73.96 Kbytes 页数：7 Pages

NEC

瑞萨

Package：SOT-523；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 3.3V 21GHZ SOT523

CEL

Package：SOT-523；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 3.3V 21GHZ SOT523

CEL