High speed switching transistor (60V, 5A)

Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 μs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952.

文件：114.23 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling di

文件：62.19 Kbytes 页数：3 Pages

PANASONIC

松下

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

For VCO Application

文件：236.14 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

For VCO Application

文件：235.6 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATIONS)

For VCO Application

文件：236.06 Kbytes 页数：4 Pages

TOSHIBA

东芝

For VCO Application

For VCO Application

文件：342.33 Kbytes 页数：6 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION)

For VCO Application

文件：73.62 Kbytes 页数：1 Pages

TOSHIBA

东芝

For VCO Application

For VCO Application

文件：342.33 Kbytes 页数：6 Pages

TOSHIBA

东芝