NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr

文件：236.59 Kbytes 页数：12 Pages

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瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68019 / 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc

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CEL

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

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NEC

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：61.27 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

文件：241.03 Kbytes 页数：12 Pages

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

文件：59.11 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

文件：59.11 Kbytes 页数：10 Pages

NEC

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Power Amplifier Applications

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