Audio Frequency General Purpose Amplefier Applications

Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1873

文件：224.13 Kbytes 页数：4 Pages

TOSHIBA

东芝

DUAL TRANSISTOR (NPN NPN)

Features ● Small package (dual type) ● High voltage and high current ● High hFE, excellent hFE linearity ● Complementary to 2SA1873

文件：850.98 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

DUALTRANSISTOR (NPN NPN )

DUAL TRANSISTOR (NPN+NPN) Features ● Small package (dual type) ● High voltage and high current ● High hFE, excellent hFE linearity ● Complementary to 2SA1873

文件：676.49 Kbytes 页数：3 Pages

JIANGSU

长电科技

Audio Frequency General Purpose Amplefier Applications

Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1873

文件：224.13 Kbytes 页数：4 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ● Silicon NPN triple diffusion planar type ● High Speed Switching ● 100 avalanche tested ● Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ● Designed for high breakdown voltage high speed switching

文件：277.86 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Dielectric breakdown voltage o

文件：42.97 Kbytes 页数：2 Pages

PANASONIC

松下

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：48.37 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：200.11 Kbytes 页数：9 Pages

RENESAS

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：200.11 Kbytes 页数：9 Pages

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：48.37 Kbytes 页数：6 Pages

NEC

瑞萨